Part Number Hot Search : 
BP210 TG16C 3312L P8255A UDZS10B IDT74FC AHC1G0 PCX48
Product Description
Full Text Search
 

To Download BCW711 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 BCW71
BCW71
C
E
SOT-23
Mark: K1
B
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
TA = 25C unless otherwise noted
Parameter
Value
45 50 5.0 500 -55 to +150
Units
V V V mA C
3
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
*BCW71 350 2.8 357
Units
mW mW/C C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
BCW71
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 100C 45 50 5.0 100 10 V V V A
ON CHARACTERISTICS
hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, IB = 0.5 mA IC = 50 mA, IB = 2.5 mA IC = 2.0 mA, VCE = 5.0 V 0.6 0.85 0.75 110 220 0.25 V V V
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 10 mA, VCE = 5.0 V, f = 35 MHz VCE = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 330 4.0 9.0 10 MHz pF pF dB
Typical Characteristics
Typical Pulsed Current Gain vs Collector Current
400
Vce = 5V 125 C
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation Voltage vs Collector Current
0.4 = 10 0.3
25 C
300
25 C
200
- 40 C
0.2
100
0.1
125 C - 40 C
0 10
20 30 50 100 200 300 I C - COLLECTOR CURRENT (mA)
500
1
10 100 I C - COLLECTOR CURRENT (mA)
400
BCW71
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
VBESAT - COLLECTOR-EMITTER VOLTAGE (V)
1 0.8 0.6 0.4 0.2 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300
- 40 C
VBEON - BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
Base-Emitter ON Voltage vs Collector Current
1 0.8 0.6 0.4 V CE = 5V 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500
- 40 C
25 C 125 C
25 C 125 C
= 10
Collector-Cutoff Current vs Ambient Temperature
I CBO - COLLE CTOR CURRENT (nA) 10 VCB = 60V
Input and Output Capacitance vs Reverse Voltage
100
f = 1.0 MHz
CAPACITANCE (pF)
10
Cib Cob
3
1
1
0.1 25
50 75 100 125 TA - AMBIE NT TEMPERATURE ( C)
150
0.1 0.1
1 10 Vce - COLLECTOR VOLTAGE (V)
100
Switching Times vs Collector Current
300 270 240 210 TIME (nS) 180 150 120 90 60 30 0 10
td tf tr
IB1 = IB2 = Ic / 10 V cc = 10 V
Power Dissipation vs Ambient Temperature
350
ts
P D - POWER DISSIPATION (mW)
300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
SOT-23
20 30 50 100 200 I C - COLLECTOR CURRENT (mA)
300
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G


▲Up To Search▲   

 
Price & Availability of BCW711

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X